Intensity variations in the near-band-edge recombination of GaP epitaxial layers, grown on (111) and (001) oriented substrates, as observed by cathodoluminescence imaging

In this study a comparison between GaP layers, grown by metalorganic vapour phase epitaxy on either (111) oriented GaP substrates or (001) oriented GaP substrates, is made with respect to the near-band-edge luminescence. Spectrally resolved cathodoluminescence, CL, images were recorded at ˜ 25 K with detection on either the bound exciton emission or the donor-to-acceptor pair emission. The intensity variations observed in the CL images are interpreted in terms of aggregation of impurities around threading dislocations. Contrary to the layers grown on (001) oriented substrates, the layers grown on (111) oriented substrates show a segregation effect of the acceptor constituent involved in the donor-to-acceptor pair emission.