| 纯铝中微量镓,硼的光电直读光谱分析 |
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| 引用本文： | 李跃萍 张元凯. 纯铝中微量镓,硼的光电直读光谱分析[J]. 光谱实验室, 1994, 11(5): 27-32 |
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| 作者姓名： | 李跃萍 张元凯 |
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| 作者单位： | 国家轻金属质量监督检验中心 |
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| 摘 要： | 本文利用ＤＶ－４１０００型光电直读光谱仪对纯Ａｌ中微量Ｇａ、Ｂ的测定方法进行了研究，自制标样，其均匀性用数理统计的方法进行了检验，Ｇａ、Ｂ的含量用化学法确定，该系列标样线性关系良好。分析范围：Ｇａ０．００１％－０．０４％，Ｂ０．０００２％－０．０１％，光源参数选用火花电感方式，冲洗２秒，预燃５秒，曝光７秒。该法简单、迅速、灵敏度和准确度较高，与化学法的分析结果对照，数据十分一致。
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| 关 键 词： | 纯铝，微量镓、硼，光电直读光谱分析。 |
Analysis of Trace Ga, B in Pure Aluminium by Photoelectric Direct Reading Spectrometry |
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| Li Yueping, Zhang Yuankai, Hua Diytng. Analysis of Trace Ga, B in Pure Aluminium by Photoelectric Direct Reading Spectrometry[J]. Chinese Journal of Spectroscopy Laboratory, 1994, 11(5): 27-32 |
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| Authors: | Li Yueping Zhang Yuankai Hua Diytng |
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| Abstract: | In this paper, determination method of trace Ga, B in pure aluminium by DV-4 1000 model photoeletric direct reading spectrometry was studied. Standard samples have been made and its homogeneity is tested by statistical method. The concentration of Ga, B is dertermined by chemical method. Liner relationship of the standards are satisfactory.Analysis range are Ga 0. 00%-0. 04% and B 0. 0002-0. 01% respectively. Spark with inductance is used for exciting source. Flushtime is two seconds; preburn is five seconds;exposure time is seven seconds. This method is simple, repid, precison and accuracy. The results obtained are comparable with chemical analysis method. |
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| Keywords: | Pure Aluminium Trace Ga B Photoeletric Direct Reading Spectrometry. |
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