Molecular beam epitaxy and characterization of Al
x
Ga1-x
As
y
Sb1-y
(0.0 ≤x ≤ 1.0) lattice matched to InAs substrates |
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| Authors: | J A Lott L R Dawson E D Jones I J Fritz J S Nelson S R Kurtz |
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| Institution: | (1) Compound Semiconductor and Device Research Department, Sandia National Laboratories, 185-5800 Albuquerque, New Mexico, USA |
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| Abstract: | We report the molecular beam epitaxial growth of Al
x
Ga1-x
As
y
Sb1-y
(0.0 ≤ x ≤ 1.0) on undoped, liquid-encapsulated Czochralski, (100) oriented InAs substrates. The degree of lattice mismatch
was determined by x-ray diffraction. The lattice matched materials (y ≈ 0.08 + 0.08x) were characterized by low temperature photoluminescence, electro-reflectance, and capacitance-voltage measurements. The
experimental bandgap energies agree with earlier experimental results for Al
x
Ga1-x
Sb, and also with a self-consistent first principles pseudopotential model. The capacitance-voltage measurements indicate
background acceptor concentrations for the unintentionally-doped epitaxial layers of about 2 × 1015 cm-3 atx = 1.0 to 5 × 1016 cm-3 atx ≈ 0.0. |
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| Keywords: | molecular beam epitaxy AlGaAsSb InAs lattice matched |
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