| 电弧-AES法测定金属硅中12个杂质元素 |
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| 引用本文： | 巩卫东. 电弧-AES法测定金属硅中12个杂质元素[J]. 光谱实验室, 1998, 15(4): 57-59 |
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| 作者姓名： | 巩卫东 |
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| 作者单位： | 洛阳进出口商品检验局,河南省洛阳九都西路,471003 |
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| 摘 要： | 用直流电弧粉末法在氩气气氛中摄谱，消除硅带干扰，采用铍为内标，直接测定金属硅中12个杂质元素，此法较化学光谱法具有操作简便、快速，试剂耗量少；较化学法和分光光度法更加优越，能同时测定12个元素，更能反映金属硅的真实含量。
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| 关 键 词： | 直流电弧 金属硅 杂质元素 测定 AES 光谱分析 |
The Way of Electric ARC-AES Determining 12 Impure Elements in Metal Silicon |
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| GONG Weidong. The Way of Electric ARC-AES Determining 12 Impure Elements in Metal Silicon[J]. Chinese Journal of Spectroscopy Laboratory, 1998, 15(4): 57-59 |
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| Authors: | GONG Weidong |
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| Abstract: | By means of D.C. electric arc powder, taking spectrum in the atmosphere of argon eliminates the interference of silicon band, while adopting beryuium as internal standard directly determines 12 impure elements in metal silicon. This method is much more simple and rapid than the chemical spectrum methods, costing less reagent than by chemical spectrum and superior than it and spectrophotometry.12 impure elements can be detected that reflects the true content of metal silicon. |
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| Keywords: | D.C. Electric Arc Metal Silicon Impure Elements. |
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