Growth temperature induced effects in non-polar a-plane GaN on r-plane sapphire substrate by RF-MBE |
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| Authors: | Mohana K Rajpalke Thirumaleshwara N Bhat Basanta Roul Mahesh Kumar P Misra LM Kukreja Neeraj Sinha SB Krupanidhi |
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| Institution: | 1. Materials Research Centre, Indian Institute of Science, Bangalore-560012, India;2. Central Research Laboratory, Bharat Electronics, Bangalore-560013, India;3. Laser Materials Processing Division, Raja Ramanna Centre for Advanced Technology, Indore-452013, India;4. Office of Principal Scientific Advisor, Government of India, New Delhi-110011, India |
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| Abstract: | Non-polar a-plane GaN films were grown on an r-plane sapphire substrate by plasma assisted molecular beam epitaxy (PAMBE). The effect of growth temperature on structural, morphological and optical properties has been studied. The growth of non-polar a-plane (1 1 ?2 0) orientation of the GaN epilayers were confirmed by high resolution X-ray diffraction (HRXRD) study. The X-ray rocking curve (XRC) full width at half maximum of the (1 1 ?2 0) reflection shows in-plane anisotropic behavior and found to decrease with increase in growth temperature. The atomic force micrograph (AFM) shows island-like growth for the film grown at a lower temperature. Surface roughness has been decreased with increase in growth temperature. Room temperature photoluminescence shows near band edge emission at 3.434–3.442 eV. The film grown at 800 °C shows emission at 2.2 eV, which is attributed to yellow luminescence along with near band edge emission. |
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