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Enhanced mid-IR luminescence of Tm3+ ions in Ga2S3 nanocrystals embedded chalcohalide glass ceramics |
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| Authors: | Shixun Dai Changgui Lin Feifei Chen Xianghua Zhang Chao Liu Kai Xu Jong Heo Xiang Shen Xunsi Wang |
| Affiliation: | 1. Faculty of Information Science and Engineering, Ningbo University, Ningbo 315211, PR China;2. Laboratoire des verres et Céramiques, Université de Rennes I, Rennes 35042, France;3. Center for Information Materials and Department of Material Science and Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk 790-784, Korea |
| Abstract: | Chalcohalide glass with a composition of 65GeS2–25Ga2S3–10CsI (in mol%) doped with 0.6 wt% Tm3+ ions was prepared by conventional melt–quench method. By heat treating the precursor glass at 20 °C above its glass transition temperature Tg for different durations, IR transparent glass ceramics were obtained. X-ray diffraction (XRD) and scanning electron microscope (SEM) showed that Ga2S3 crystallites were precipitated after heat treatment and their grain sizes were in nano-scale and increased with the elongation of heat treated time. Mid-IR luminescence properties of the glass and transparent glass ceramic samples were investigated. The emissions at 2.3 and 3.8 μm corresponding to optical transitions of 3H4 → 3H5 and 3H5 → 3F4 of Tm3+ ions were significantly enhanced by the presence of Ga2S3 nanocrystals and reached a maximum after 8 hours treatment. |
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