Doubly Q-switched GdVO4/Nd:GdVO4 laser with AO modulator and Cr4+:YAG saturable absorber under direct 879 nm diode pumping to the emitting level |
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| Authors: | Yufei Ma Yue Zhang Xin Yu Xudong Li Fei Chen Renpeng Yan |
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| Institution: | 1. National Key Laboratory of Science and Technology on Tunable Laser, Harbin Institute of Technology, China;2. School of Foreign Languages, Harbin Institute of Technology, Harbin 150001, China;1. College of Science, China University of Petroleum (East China), Qingdao 266580, China;2. School of Information Science & Engineering, Shandong University, Jinan 250100, China;1. School of Optoelectronic and Communication Engineering, Xiamen University of Technology, Xiamen, 361024, China;2. Fujian Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen, 361024, China;3. Wireless and Optoelectronics Research and Innovation Centre, University of South Wales, Cardiff, CF371DL, United Kingdom;1. National Institute for Laser, Plasma and Radiation Physics, Laboratory of Solid-State Quantum Electronics, Bucharest R-077125, Romania;2. Doctoral School of Physics, University of Bucharest, Romania;3. University of Bucharest, Faculty of Physics, Bucharest R-077125, Romania;1. Laser Center, Ibnu Sina Institute for Scientific & Industrial Research (ISI-SIR), Universiti Teknologi Malaysia, 81310 Johor Bahru, Malaysia;2. Photonic Research Center, Universiti Malaya, Kuala Lumpur, Malaysia |
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| Abstract: | In this letter, a doubly Q-switched 1.06 μm pulse laser with AO modulator and Cr4+:YAG saturable absorber by direct pumping grown-together composite GdVO4/Nd:GdVO4 crystal is demonstrated for the first time. Compared to purely AO Q-switching, the simultaneous use of AO Q-switch and Cr4+:YAG saturable absorber can generate shorter pulses and more symmetric temporal profiles. The thermal lens effect of laser crystal was analyzed. |
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