| 点接触平面栅型硅单电子晶体管 |
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| 引用本文： | 孙劲鹏,王太宏.点接触平面栅型硅单电子晶体管[J].微纳电子技术,2002,39(4):8-10,36. |
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| 作者姓名： | 孙劲鹏 王太宏 |
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| 作者单位： | 中国科学院物理研究所,北京,100080 |
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| 基金项目： | 国家重点基础研究专项经费和国家自然科学基金资助课题 |
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| 摘 要： | 设计了点接触平面栅型硅单电子晶体管,利用自对准技术实现了点接触平面栅,并通过给平面栅施加偏压实现了量子点。讨论了点接触平面栅型单电子晶体管与其通道宽度和平面栅上电压的关系。对一个具有70nm宽通道的器件,先在其表面栅上施加很小的正偏压,然后又在其平面栅上施加负偏压耗尽通道,最终的研究结果显示在通道中形成了单个量子点。
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| 关 键 词： | 单电子晶体管 自对准技术 库仑振荡 |
| 文章编号： | 1671-4776(2002)04-0008-03 |
Si single-electron transistor with in-plane point-contact metal gates |
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| SUN Jin-peng,WANG Tai-hong.Si single-electron transistor with in-plane point-contact metal gates[J].Micronanoelectronic Technology,2002,39(4):8-10,36. |
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| Authors: | SUN Jin-peng WANG Tai-hong |
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| Abstract: | We have designed Si single-electron transistor with in-plane point-contact metal gates.These in-plane gates are fabricated by a self-aligned process,which are used to squeeze the channel and to form a single dot at the constriction of the channel.The characteristics of such single-electron transistor strongly depend on the channel width and the voltage of the in-plane gates.For a device with a70nm wide channel,a single dot is formed in the conducting channel if we apply a less positive bias to the top gate and negative voltages to the in-plane gates. |
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| Keywords: | single-electron transistor self-aligned process Coulomb blockade oscillation |
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