| MSM结构Mg0.2Zn0.8O可见盲光电探测器 |
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| 引用本文： | 蒋大勇,徐锋,曹雪,孙云刚,陈濛,刘芯宇.MSM结构Mg0.2Zn0.8O可见盲光电探测器[J].光学学报,2011(10):17-20. |
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| 作者姓名： | 蒋大勇 徐锋 曹雪 孙云刚 陈濛 刘芯宇 |
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| 作者单位： | 长春理工大学材料科学与工程学院; |
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| 基金项目： | 吉林省科技发展计划项目(201101103); 国家大学生创新性实验计划(2010A0637)资助课题 |
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| 摘 要： | 采用射频磁控溅射,通过传统的紫外曝光和湿法腐蚀的方法,制备了不同电极间距的金属-半导体-金属(MSM)结构Mg0.2Zn0.8O可见盲光电探测器.研究了器件的暗电流和响应度随电极间距的变化关系,当施加的电压没有达到贯穿电压的时候,暗电流和响应度均随着电极间距的增加而减小,并对其具体的机制进行了研究.
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| 关 键 词： | 光电探测器 氧镁锌 响应度 暗电流 金属-半导体-金属(MSM)结构 |
Metal-Semiconductor-Metal Structured Mg_(0.2)Zn_(0.8)O Visible Blind Photodetectors |
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| Jiang Dayong Xu Feng Cao Xue Sun Yungang Chen Meng Liu Xinyu.Metal-Semiconductor-Metal Structured Mg_(0.2)Zn_(0.8)O Visible Blind Photodetectors[J].Acta Optica Sinica,2011(10):17-20. |
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| Authors: | Jiang Dayong Xu Feng Cao Xue Sun Yungang Chen Meng Liu Xinyu |
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| Institution: | Jiang Dayong Xu Feng Cao Xue Sun Yungang Chen Meng Liu Xinyu(School of Materials Science and Engineering,Changchun University of Science and Technology,Changchun,Jilin 130022,China) |
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| Abstract: | The metal-semiconductor-metal(MSM) structured Mg0.2Zn0.8O photodetectors with different electrode spacings are made by radio frequency magnetron sputtering,conventional ultraviolet exposure and wet etching methods.The relationship between electrode spacing and dark current or responsivity is studied.Before achieving the punch-through voltage,the dark current and responsivity both decrease with the electrode spacing increasing.Furthermore,the specific mechanisms are also investigated. |
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| Keywords: | photodetector MgZnO responsivity dark current metal-semiconductor-metal structure |
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