Structural and electrical properties of 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 thin films grown on Ir/MgO buffered Si(100) substrates |
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| Authors: | F. Wu X.M. Li W.D. Yu X.D. Gao X. Zhang |
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| Affiliation: | (1) State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Ding Xi Road, Shanghai, 200050, P.R. China;(2) Graduate School of Chinese Academy of Science, Beijing, 100039, P.R. China |
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| Abstract: | Thin films of 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN-PT) have been grown on Ir/MgO buffered Si(100) substrates at different substrate temperatures by pulsed laser deposition. Crystalline phases as well as preferred orientations in the PMN-PT films were investigated by X-ray diffraction analysis (XRD). The microstructure, dielectric and ferroelectric properties of PMN-PT film prepared at 650 °C were studied. The results show that the film prepared at 650 °C exhibits pure perovskite phase and single c-axis orientation. The dielectric constant and dissipation factor of the single c-axis oriented film are 1000 and 0.04 at a frequency of 1 kHz, while the remnant polarization and coercive field are about 13.0 μC/cm2 and 100 kV/cm under an electric field of 480 kV/cm, respectively. PACS 81.15.Fg; 77.80.-e; 77. 22.Ej; 77.55.+f; 85.50.Gk |
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