An analysis of the mechanism of Kerr effect enhancement in Mn/Dy/Bi |
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Authors: | S. G. Ovchinnikov L. V. Burkova V. A. Seredkin V. Yu. Yakovchuk |
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Affiliation: | (1) L. V. Kirenskii Institute of Physics, Siberian Branch of the Russian Academy of Sciences, 660036 Krasnoyarsk, Russia |
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Abstract: | A study is reported of the structural, magnetic, and magneto-optic properties of Mn/Dy/Bi films obtained by multilayer technology. The maximum Kerr rotation angle in such films is shown to be θ k =2.25°. Possible reasons for such a large Kerr effect enhancement are considered, namely, an increase in the 6p–3d transition probability caused by symmetry distortion, polarization of the Bi6p band, and a change in the density of states near the Fermi level. The latter reason has been analyzed by simulating the electronic structure of Mn/Dy/Bi through superposition of Dy levels on the MnBi band structure. This approach has revealed possible additional transitions which may be induced by the presence of a Dy buffer and could contribute to the Kerr magneto-optic effect. Fiz. Tverd. Tela (St. Petersburg) 41, 91–97 (January 1999) |
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