Institut für Physik, Universität Dortmund, D-44221 Dortmund, Germany
Abstract:
The pressure shift of S excitons in the rutile-type semiconductor tin oxide (SnO2) is measured by two-photon absorption. From these data the pressure coefficients of the band gap (62.0 meV/GPa) and of the exciton binding energy (0.87 meV/GPa) are determined.