Applications of photoconductivity measurements in n-InSb under crossed fields

The photocurrent in n-InSb at 85K was measured as function of the applied longitudinal voltage and an additionally applied transverse magnetic field. In the driftconfiguration the photoionized electron-hole plasma was driven into the sample volume, and negative photocurrents resulted from the negative feedback of this motion. With the magnetic field being reversed, in the Suhl configuration, only positive photocurrents were measured. All results are in agreement with the theory in [1]. They were used to determine recombination coefficients in n-InSb, and, principally, the transverse diffusion coefficientD _⊥. As first observed in [13],D _⊥ proved to be anomalously enhanced above classical values if plasma instabilities were generated in the samples.