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Relation between interdiffusion and polarity for MBE growth of GaN epilayers on ZnO substrates |
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| Authors: | Takuma Suzuki Chihiro Harada Hiroki Goto Tsutomu Minegishi Agus Setiawan H J Ko Meoung-Whan Cho T Yao |
| Institution: | a Center for Interdisciplinary Research, Tohoku University, Aramaki, Aoba-ku, Sendai 980-8578, Japan;b Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;c Korea Photonics Technology Institute, Bonchon-dong 459-3, Buk-gu, Gwangju 500-210, South Korea |
| Abstract: | We report on GaN growth on Zn-polar ZnO substrates using plasma-assisted molecular-beam epitaxy (P-MBE). Before GaN growth, ZnO substrate annealing conditions were optimized. Reflection high-energy electron diffraction (RHEED) patterns after low-temperature GaN buffer layer annealing changed from streaky to spotty, suggesting that zinc and oxygen atoms interdiffuse from the ZnO substrate into the GaN epilayer. This interdiffusion results in a mix-polar GaN epilayer. |
| Keywords: | ZnO GaN Hetero interface Polarity Molecular beam epitaxy |
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