Controlled growth of nanocrystalline silicon on permalloy micro-patterns

Lithographically prepared micrometer-sized permalloy ellipses were used to control the growth of nanocrystalline Si in otherwise amorphous Si film prepared by plasma enhanced chemical vapor deposition. Atomic force microscopy and micro-Raman spectroscopy were employed to study the surface structures before and after the deposition of the Si film. The possible applications of the controlled growth of nanocrystalline Si micro-patterns are discussed as well as the mechanisms leading to the growth of these patterns. PACS 68.55.Ac; 81.15.Gh