Excitons in ZnP2 crystals in the electric field of a Schottky barrier |
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| Authors: | S. O. Romanovskii A. V. Sel’kin I. G. Stamov N. A. Feoktistov |
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| Affiliation: | (1) A. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia |
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| Abstract: | A study is made of the effect of electric fields on the exciton states of β-ZnP2 crystals (T=77 K) in structures with Schottky barriers formed by depositing semitransparent electrically-conducting InSnO2 films on the crystal surface. The observed changes in the exciton optical reflection spectra when an electrical potential is applied to a barrier are explained by the shift and broadening of the exciton level caused by the Stark effect. The experimental data are compared with calculations based on a theory of exciton optical reflection from planar spatially nonuniform structures. Fiz. Tverd. Tela (St. Petersburg) 40, 884–886 (May 1998) |
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