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磁控溅射制备ZnO薄膜及其声表面波特性
引用本文:杨光,Santos Paulo V..磁控溅射制备ZnO薄膜及其声表面波特性[J].物理学报,2007,56(6):3515-3520.
作者姓名:杨光  Santos Paulo V.
作者单位:(1)Paul-Drude固体电子学研究所,柏林 D-10117,德国; (2)华中科技大学武汉光电国家实验室激光科学与技术研究部,武汉 430074;华中科技大学光电子科学与工程学院,武汉 430074;Paul-Drude固体电子学研究所,柏林 D-10117,德国
摘    要:通过射频磁控溅射技术在GaAs,Au/GaAs,Si和玻璃基片上成功制备了ZnO多晶薄膜,利用X射线衍射对ZnO薄膜的取向、结晶性进行了表征,结果表明ZnO薄膜呈完全c轴取向,Au缓冲层可以有效地改善ZnO薄膜的晶体质量,X射线摇摆曲线结果表明ZnO(002)衍射峰的半高宽仅为2.41°,同时发现Au缓冲层的结晶质量对ZnO薄膜的c轴取向度有很大影响,通过扫描电子显微镜对ZnO/GaAs和ZnO/Au/GaAs薄膜的表面形貌进行了观测,利用网络分析仪对IDT/ZnO/GaAs薄膜的声表面波特性进行了测量. 关键词: ZnO薄膜 X射线衍射 声表面波

关 键 词:ZnO薄膜  X射线衍射  声表面波
文章编号:1000-3290/2007/56(06)/3515-06
收稿时间:2006-11-03
修稿时间:2006-11-03

Surface acoustic wave properties of ZnO films grown by magnetron sputtering
Yang Guang,Santos Paulo V..Surface acoustic wave properties of ZnO films grown by magnetron sputtering[J].Acta Physica Sinica,2007,56(6):3515-3520.
Authors:Yang Guang  Santos Paulo V
Institution:1. Division of Laser Science and Technology, Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China; 2. School of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China ; 3. Paul-DrudelnstituteforSolid-StateElectronics ,Berlin D- 10117, Germany
Abstract:In this letter we report the fabrication and structural properties of ZnO thin films grown on GaAs,Au/GaAs,Si and glass substrates by rf magnetron sputtering. The x-ray diffraction data indicated that all the ZnO films were pure c-axis oriented and the rocking curves showed that the full-width at half maximum(FWHM) of ZnO(002) peak of ZnO/Au/GaAs films is as small as 2.41°. The SEM images showed better surface for the ZnO films grown with Au buffer. The surface acoustic wave properties of IDT/ZnO/GaAs filter were measured by HP8753C network analyzer. The results indicated that the insertion loss is only 10.4dB and the electric efficiency can be up to 84.1% using the 5.6μm-wavelength IDT.
Keywords:ZnO films  x-ray diffraction  surface acoustic waves
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