Photoconductive response times of Si-on-sapphire damaged with Si28 ions

We present autocorrelation measurements showing the high-speed sampling and switching capabilities of SOS photoconducting elements which have been ion implanted with 60 and 160 keV Si²⁸ ions. An analysis of the circuit shows the intrinsic photoconductive decay to be very fast (3.5 ps) and that the measured response is primarily limited by the gap capacitance and the associated R-C time.