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EXAFS measurements for liquid As2Se3 at high temperatures and pressures |
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| Authors: | Kozaburo Tamura Shinya Hosokawa Masanori Inui Makoto Yao Hirohisa Endo Hideoki Hoshino |
| Institution: | a Faculty of Integrated Arts and Sciences, Hiroshima University, Hiroshima 730, Japan b College of General Education, Kyushu University, Fukuoka 810, Japan c Department of Physics, Faculty of Science, Kyoto University, Kyoto 606, Japan d Faculty of Education, Hirosaki University, Hirosaki 036, Japan |
| Abstract: | Extended X-ray absorption fine structure (EXAFS) spectra from liquid As2Se3 around both the As and Se K-edges in the temperature-pressure range up to 1400°C and about 60 bar were measured. For the EXAFS measurements, a new type of high pressure vessel and a sample cell of own design made of polycrystalline sapphire were developed. Distinct EXAFS oscillations were obtained even at 1400°C. When the semiconductor-to-metal transition occurs at about 1000°C, the local environment around a central As atoms is substantially changes and a new As neighbor site is induced. |
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