| CVT法生长GaP多晶 |
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| 引用本文： | 王向阳,何莉,田鸿昌,东艳萍,蔡以超.CVT法生长GaP多晶[J].人工晶体学报,2004,33(5):860-862. |
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| 作者姓名： | 王向阳 何莉 田鸿昌 东艳萍 蔡以超 |
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| 作者单位： | 人工晶体研究院,北京,100018 |
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| 摘 要： | 阐述了CVT(化学气相输运)法生长GaP的基本反应和输运速度,采用CVT法生长出了GaP多晶.设计了石英管的结构以制造出一个局部的低温区域,防止了GaP在管壁的生长.生长出的GaP多晶相对密度为98;,红外透过率达到30;,努普硬度为611kg/mm2.散射颗粒测试表明主要的光散射颗粒为多晶中存在的孔隙.
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| 关 键 词： | CVT(化学气相输运) GaP多晶 红外窗口材料 |
| 文章编号： | 1000-985X(2004)05-0860-03 |
Polycrystalline GaP Growth by CVT Method |
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| WANG Xiang-yang,HE Li,TIAN Hong-chang,DONG Yon-ping,CM Yi-Chao.Polycrystalline GaP Growth by CVT Method[J].Journal of Synthetic Crystals,2004,33(5):860-862. |
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| Authors: | WANG Xiang-yang HE Li TIAN Hong-chang DONG Yon-ping CM Yi-Chao |
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| Abstract: | The basic reactions and transport velocity of polycrystalline GaP grown by CVT (chemical vapor transport) method were explained. Polycrystalline GaP was grown by CVT method. The configuration of quartz glass tube was designed to make a local cold spot, thus the growth on the wall of the tube was prevented. The results show that the relative density of as-grown GaP is 98%, transparency reaches 30% in infrared region, and Knoop hardness is 611 kg/mm2. The scattering grain test indicates that the main scattering is attributed to the holes existing in the ploycrystal. |
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| Keywords: | CVT( chemical vapor transport) polycrystalline GaP infrared windows materials |
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