Non-equivalent minima scattering in n-type Ga1−xAlxAs alloys from Monte Carlo methods |
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Authors: | Ashok K Saxena |
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Institution: | Department of Electronics and Electrical Engineering, The University of Sheffield, Mappin St. Sl 3JD, Sheffield, UK |
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Abstract: | Using the known conduction band structure for Ga1?xAlxAs alloys, the electron drift mobilities in the Γ, L and X minima have been calculated as a function of pressure using Monte Carlo methods. These mobilities are found to decrease first, show a minimum at a pressure near the Γ-L minima crossover and then increase again with pressure due to strong non-equivalent intervalley scattering. The calculated Hall mobility also shows similar behaviour and the results are in qualitative agreement with the experimental observations reported earlier. |
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