Formation of a monolayer <Emphasis Type="Italic">h</Emphasis>-BN nanomesh on Rh (111) studied using <Emphasis Type="Italic">in-situ</Emphasis> STM |
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| Authors: | GuoCai Dong Yi Zhang Joost W M Frenken |
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| Institution: | 1.Kamerlingh Onnes Laboratory,Leiden University,Leiden,The Netherlands;2.National Laboratory of Solid State Microstructure, School of Physics, Collaborative Innovation Center of Advanced Microstructures,Nanjing University,Nanjing,China;3.Jiangnan Graphene Research Institute,Changzhou,China;4.Advanced Research Center of Nanolithography,Amsterdam,The Netherlands |
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| Abstract: | As a member of the 2D family of materials, h-BN is an intrinsic insulator and could be employed as a dielectric or insulating inter-layer in ultra-thin devices. Monolayer h-BN can be synthesized on Rh (111) surfaces using borazine as a precursor. Using in-situ variable-temperature scanning tunneling microscopy (STM), we directly observed the formation of h in real-time. By analyzing the deposition under variable substrate temperatures and the filling rate of the h-BN overlayer vacant hollows during growth, we studied the growth kinetics of how the borazine molecules construct the h-BN overlayer grown on the Rh surface. |
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