| 共溅射法制备Cu-In合金膜及电学性能分析 |
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| 引用本文： | 马忠权,徐少辉,郑毓峰,简基康,李冬来.共溅射法制备Cu-In合金膜及电学性能分析[J].新疆大学学报(理工版),2002,19(1):1-5. |
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| 作者姓名： | 马忠权 徐少辉 郑毓峰 简基康 李冬来 |
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| 作者单位： | 新疆大学物理系，新疆乌鲁木齐830046 |
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| 基金项目： | 国家自然科学基金 (5 9862 0 0 2 )，新疆维吾尔自治区自然科学基金 (970 91 8)，地区自然科学基金的资助 (№ .9781 9) |
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| 摘 要： | 采用共溅射方法制备了Cu-In合金膜，并讨论了Cn-In合金膜的结构、电学性能以及溅射时间对Cu-In合金膜的结构及电学性能的影响，结果显示，Cu－In合金膜仅有单峰、多晶晶面间距不随着膜厚的增加而改变，用费－桑理论对Cu-In合金膜的电学性质进行了分析，临界厚度的讨论结果表明，溅射3－4min是面电阻的转变点，而电学参数分析也给出相同的结果。
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| 关 键 词： | 共溅射法 Cu－In合金膜 电学性质 费－桑理论 临界厚度 薄膜结构 溅射时间 铜铟合金膜 |
| 文章编号： | 1000-2839(2002)01-0001-05 |
| 修稿时间： | 2000年12月27 |
Co-Sputtered Cu-In Alloy Thin Film and Its Electrical Property |
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| MA Zhong quan,XU Shao hui,ZHENG Yu feng,JIAN Ji kang,LI Dong lai.Co-Sputtered Cu-In Alloy Thin Film and Its Electrical Property[J].Journal of Xinjiang University(Science & Engineering),2002,19(1):1-5. |
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| Authors: | MA Zhong quan XU Shao hui ZHENG Yu feng JIAN Ji kang LI Dong lai |
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| Abstract: | The thin films of Cu In binary alloy have been prepared on glass substrate by means of d.c co sputtering techniques.Their microstructure and electric property are analyzed with X ray diffraction (XRD) and Hall effect measurement,respectively.The influence of sputtering time on the structure and electric property of the films is also discussed.The results show that a strongly preferential oriented polycrystalline grain exists and the distance of plans does not change with the thickness of the films.Fuchs Sondheimer theory is employ to elucidate the variation of sheet resistance.There is a critical thichness for sheet resistivity. |
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| Keywords: | Co sputtering Cu In alloy film microstructure of film electric property Fuchs Sondheimer theory critical thickness |
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