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Phase size effect in thin Ge-Se polycrystalline films
Authors:E V Aleksandrovich  E V Stepanova  A V Vakhrouchev  A N Aleksandrovich  D L Bulatov
Institution:1. Institute of Mechanics, Ural Branch, Russian Academy of Sciences, ul. T. Baramzinoi 34, Izhevsk, 426067, Russia
2. Udmurtia State University, Universitetskaya ul. 1, Izhevsk, 426034, Russia
Abstract:The Raman spectra of thin (d = 60–170 nm) Ge-Se polycrystalline films obtained by vacuum thermal evaporation of Ge10Se90 glass are investigated in the spectral range 110–310 cm?1. The coexistence of the glasslike and crystalline phases α-Se, β-Se, and β-GeSe2 is established using the X-ray diffraction method. Analysis of diffraction patterns and the Raman spectra of polycrystalline samples of various thicknesses demonstrates a phase size effect in the transition of Se from the α-monoclinic to the β monoclinic modification (d ~ 120 nm). It is found that the crystalline phase of Se is of the nanodisperse type with an average grain size of ~30–50 nm. Crystallites of β-GeSe2 have an average size of ~100–130 nm.
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