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Cu site substitution effect on the Hall coefficient of La2−xSrxCuO4
Authors:M Sera  H Sato  M Hiroi  N Kobayashi
Institution:

Institute for Materials Research, Tohoku University, 2-1-1, Katahira, Aoba-ku, Sendai 980, Japan

Abstract:The Cu site substitution effects on the Hall coefficient RH and the electrical resistivity varrho have been studied for La2?xSrxCuO4. In a small x region, RH decreases largely with Zn doping and increases with Ni doping. In the Ni doped samples, varrho shows the characteristic temperature dependence similar to those of the unsubstituted samples where the decrease of the slope of varrho vs. T curve is observed for x<0.1 above not, vert, similar600K but in the Zn doped samples, the change of the slope of varrho becomes smaller,i.e. the temperature dependence of varrho below not, vert, similar600K becomes smaller. These results indicate that the origin of the change of the slope of varrho around 600K for x<0.1 is magnetic and the spin correlation or the electronic state is rather different below and above not, vert, similar600K. The unusual Zn doping dependences of RH and varrho are naturally explained by considering that the electronic state at high temperatures above not, vert, similar600K which has a small Hall coefficient expected for the large Fermi surface comes down to lower temperatures by the Zn doping.
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