Site‐Selective Occupancy of Eu2+ Toward Blue‐Light‐Excited Red Emission in a Rb3YSi2O7:Eu Phosphor

Establishing an effective design principle in solid‐state materials for a blue‐light‐excited Eu²⁺‐doped red‐emitting oxide‐based phosphors remains one of the significant challenges for white light‐emitting diodes (WLEDs). Selective occupation of Eu²⁺ in inorganic polyhedra with small coordination numbers results in broad‐band red emission as a result of enhanced crystal‐field splitting of 5d levels. Rb₃YSi₂O₇:Eu exhibits a broad emission band at λ_max=622 nm under 450 nm excitation, and structural analysis and DFT calculations support the concept that Eu²⁺ ions preferably occupy RbO₆ and YO₆ polyhedra and show the characteristic red emission band of Eu²⁺. The excellent thermal quenching resistance, high color‐rendering index R_a (93), and low CCT (4013 K) of the WLEDs clearly demonstrate that site engineering of rare‐earth phosphors is an effective strategy to target tailored optical performance.