High-power and high-frequency operation of InGaAsP/InP lasers at 1.3 μm |
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| Authors: | T. R. Chen B. Zhao Y. H. Zhuang A. Yariv H. Blauvelt N. Bar-Chaim |
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| Affiliation: | a California Institute of Technology, Pasadena, CAb University of Electronic Science and Technology, Chinac Ortel Corporation, Alhambra, CA |
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| Abstract: | A simultaneous operation of a semiconductor laser at high power and high speed was demonstrated in a buried crescent laser on p-InP substrate. In a cavity length of 300 μm, a maximum continuous wave (CW) power of 130 mW at room temperature was obtained in a junction-up mounting configuration. A 3dB bandwidth in excess of 12 GHz at an output power of 52 mW was observed. |
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