White-light-emitting diodes using GaN-excited CdSe/CdS/ZnS quantum dots |
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| Authors: | Yijun Lin, Yu Zhang, Jia Zhao, Pengfei Gu, Ke Bi, Qiuran Zhang, Hairong Chu, Tieqiang Zhang, Tian Cui, Yiding Wang, Jun Zhao, William W. Yu |
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| Affiliation: | [1]State Key Laboratory on Integrated Optoelectronics, and College of Electronic Science and Engineering.Jilin University, Changchun 130012. China; [2]State Key Laboratory of Superhard Materials, and College ofPhysics, Jilin University, Changchun 130012, China; [3]Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130025, China; [4]Department of Chemistry and Physics, Louisiana State University, Shreveport, LA 71115, USA; [5]College of Material Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042, China |
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| Abstract: | Fluorescence-based white-light-emitting diodes(WLEDs) were fabricated using blue GaN chips and green- and red-emitting CdSe/CdS/ZnS quantum dots(QDs).The coordinate and color temperature of the WLEDs could be varied because of the size-tunable emission of CdSe QDs from 510 to 620 nm.Warm and cold white emissions were confirmed with the color temperature ranging from 4000 to 9000 K.Color coordinates were analyzed at different bias.The fast enhancement of blue emission resulted in the shift of color coordinates to the cold side.The stability of white emission during operation was analyzed;stable spectra were achieved within 90 min. |
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| Keywords: | GaN Quantum dots White-light-emitting diode Stability |
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