Dependence of V-A characteristics of amorphous semiconductor Ge15Te81S2As2 on hydrostatic pressure

The paper presents the functional expression of V-A characteristics dependent on hydrostatic pressure up to 5 kbar for chalcogenide glass Ge₁₅Te₈₁S₂As₂. The measured V-A characteristics and those derived on the assumption of a linear decrease of the energy gap due to pressure have been compared. Temperature changes caused by current passing through the sample in thermal contact with the environment have been taken into consideration similarly as in the case of paper (2).In conclusion we wish to express our thanks to Doc. J.Krempaský CSc., Ing. P.Dieka, Ing. J.Bielek for their kind help in discussing various points of the problem.