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The beneficial effects of a p-type GaInN spacer layer on the efficiency of GaInN/GaN light-emitting diodes |
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| Institution: | 1. Future Chips Constellation, Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA;2. Veeco MOCVD Operations, Somerset, NJ 08873, USA;3. Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;4. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561-756, Republic of Korea |
| Abstract: | Light-emitting diodes (LEDs) with a Mg-doped p-type Ga1?xInxN (0 ≤ x ≤ 0.07) spacer layer located between an undoped GaN spacer layer and the electron blocking layer are investigated. The LEDs are found to have comparable peak efficiency but less efficiency droop when the crystal quality of the p-type Ga1?xInxN spacer layer is well-controlled by lowering the growth temperature and by using a suitable In composition and Mg doping concentration. All LED samples with the p-type spacer layer show a smaller efficiency droop compared to a reference LED having an undoped GaN spacer. Among the sample sets investigated, an optical power enhancement of 12% at 111 A/cm2 is obtained when inserting a 5 nm-thick p-type Ga0.97In0.03N spacer layer. The results support that carrier transport is the key factor in the efficiency droop observed in GaN-based LEDs. |
| Keywords: | Light-emitting diode Efficiency droop MOCVD Nitride semiconductor |
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