Effect of negative electric field on spin-dependent tunneling in double barrier semiconductor heterostructures
Institution:
1. Department of Physics, The American College, Madurai 625002, India;2. Department of Physics, Alagappa Govt. Arts College, Karaikudi 630003, India;3. Department of Physics, Sree Sevugan Annamalai College, Devakottai 630303, India
Abstract:
The effect of negative electric field on spin-dependent tunneling in double barrier heterostructures of III–V semiconductor is theoretically investigated. The transfer matrix approach is used by considering Dresselhaus and induced-Rashba effect to calculate the barrier transparency and polarization efficiency. Cent percent polarization efficiency can be achieved for the negative electric field by increasing the width of the potential barrier. The separation between spin-up and spin-down resonances are evaluated. The separation between spin resonances and tunneling lifetime of electrons are observed for various negative electric fields as well as for various barrier widths. The linear variation of spin separation and tunneling lifetime of electrons are observed as a function of negative electric field.