Self-consistent charge-up simulation for the microscopic feature of SiO2 layer in rf capacitive discharge

The charge-up simulation of the microscopic feature with SiO₂ layer was investigated in various conditions of rf capacitive discharge by using the three-dimensional (3-D) particle-in-cell (PIC) charge-up simulation coupled with the one-dimensional (1-D) particle-in-cell Monte Carlo collision (PIC-MCC) simulation of rf capacitive argon discharge. The result showed that the charge-up effect on the micro-trench was greatly influenced by the conditions of the gas pressure and the discharge voltage in rf capacitive discharge. Based on the analysis of the distributions of electrons and ions arriving at the substrate in various plasma conditions, the charge-up effect and its reduction mechanisms on the micro-trench of capacitive discharge were discussed. This article is expected to provide qualitative and quantitative insight for the understanding of charging and its reduction mechanism on many plasma processes performed by the rf capacitive discharge.