Structural and optical characterization of wurtzite type ZnS |
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Institution: | 1. Centro de Investigación en Biotecnología Aplicada, Instituto Politécnico Nacional, Ex-Hacienda de San Juan Molino Km, 1.5, Tepetitla, Tlaxcala 90700, Mexico;2. Universidad Politécnica de Pachuca (UPP) Km. 20, Rancho Luna, Ex-Hacienda de Santa Bárbara, Municipio de Zempoala, Hidalgo 43830, Mexico;3. Depto. de Ingeniería Eléctrica, SEES, CINVESTAV-IPN. Apartado Postal 14-740, México D. F. 07000, Mexico |
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Abstract: | ZnS films were grown on (001) GaAs substrates at different temperatures by RF magnetron sputtering. The ZnS chemical stoichiometry was determined by Energy-dispersive X-ray spectroscopy (EDS), besides it allowed to find the residual impurities, mainly oxygen. The X-ray diffraction (XRD) analysis and Raman scattering reveal that ZnS deposited thin films showed hexagonal wurtzite crystalline phase. The films average crystallite size range was from 8.15 to 31.95 nm, which was determined using the Debye–Scherrer equation for the peak W(101). Besides an experimental study of first- and second-order Raman scattering of ZnS films is made. An energy level diagram involving oxygen traps and interstitial sulphur ions is used to explain the origin of the radiative transitions observed in the room temperature photoluminescence (PL) spectra. |
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Keywords: | II–VI semiconductor compounds Hexagonal wurtzite-type ZnS X-Ray diffraction SEM-EDS Photoluminescence Raman scattering |
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