Charge storage characteristics of nonvolatile memories with chemically-synthesized and vacuum-deposited gold nanoparticles |
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| Institution: | 1. Department of Electronic Engineering, Chang Gung University, Guishan Dist., Taoyuan City 33302, Taiwan;2. Department of Materials Engineering and Center for Thin Film Technologies and Applications, Ming Chi University of Technology, Taishan Dist., New Taipei City 24301, Taiwan;3. Graduated Institute of Photonics and Optoelectronics and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan |
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| Abstract: | Carrier injection and charge loss characteristics of nonvolatile memories with chemically-synthesized (CS) and vacuum-deposited (VD) gold nanoparticles (Au-NPs) have been investigated. Compared to CS counterparts, the memories with VD Au-NPs exhibit a higher dot density of 3.77 × 1011 cm−2, leading to a larger memory window. Further, the energy from valence-band edge to vacuum level (EVB_vac) of tunneling oxide for the samples with CS and VD Au-NPs is found to be 9.04 and 9.85 eV respectively. The small EVB_vac value of the memories with CS Au-NPs is resulted from the formation of a thin chemical oxide (SiOx) on thermally-grown SiO2 tunneling layer during the chemically synthesized process, contributing to a slow erasing behavior. Besides, the programming of the memories with VD Au-NPs is saturated at high gate bias, which has been well-explained by the electrons induced potential coupling between Au-NPs. Superior data retention property and high temperature dependence of charge loss are observed for the memories with CS Au-NPs, which can be ascribed to the thick tunneling oxide layer by the additional SiOx film. |
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| Keywords: | Chemically-synthesized Vacuum-deposited Gold nanoparticle Potential coupling |
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