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The electrical characterizations and illumination response of Co/N-type GaP junction device |
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| Institution: | 1. Vocational School of Health Services, Bingöl University, 12000 Bingöl, Turkey;2. Department of Physics, Faculty of Sciences, Bingöl University, 12000 Bingöl, Turkey;3. Vocational School of Technical Sciences, Bingöl University, 12000 Bingöl, Turkey;4. Istanbul Medeniyet University, Faculty of Sciences, Department of Engineering Physics, 34720 Istanbul, Turkey |
| Abstract: | |
| Keywords: | GaP semiconductor Thermionic emission Interface states Illumination impact Schottky barrier height |
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