Effects of junction defect healing in Germanium n-MOSFET through thermal annealing

In this paper, the impact of junction defect healing through thermal annealing in Ge n-metal-oxide-semiconductor field-effect transistors (MOSFETs) is thoroughly investigated. Germanium (Ge) is strongly affected by the presence of point defects within the crystal, which is the source of leakage current and low frequency noise. For MOSFET applications, these defects at the junction of the source and drain area are created by ion implantation. However, these can be significantly reduced by proper thermal treatment. Here, the effect of defect healing is investigated and presented through current–voltage characteristics of a n⁺/p diode and MOSFET I_D-V_G measurement, and secondary ion mass spectroscopy (SIMS).