A model for engineering the electrical conductance at nanoscale

With the emergence of nanoelectronics faster and denser circuits are being produced, this largely because the aggressive scaling to the nanometer range of the insulating film used as dielectric. Moreover, enhancements of the electrical conductivity of nanofiller based composites can be achieved by the incorporation of conductive nanofillers into polymer matrix. In such systems electron wave-function penetration into the dielectric is important as it leads to undesired or desired leakage currents by tunneling respectively. Therefore, a proper design of the electrical conductance in such structures becomes important in order to control accurately their performance. In this research, a model for engineering the electrical conductance of resistors at nanoscale is presented. The conductance at infinitesimal bias of nanoresistors is modeled within the framework of Landauer's tunneling which results in an exponential integral function for the total electrical conductance. Model takes the effects of azimuthal and inclination angles between nanocontacts into account, as well as the effect of the thickness of the dielectric layer. The model also unveils a U-shaped behavior of the electrical conductance as a function of the azimuthal angle between nanocontacts. As a result, a minimal electrical conductance is predicted when the azimuthal angle reaches 90°.