Dual-gated BN-sandwiched multilayer graphene field-effect transistor fabricated by stamping transfer method and self-aligned contact |
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Affiliation: | 1. Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea;2. Integrated Energy Center for Fostering Global Creative Researcher (BK21 Plus), Sungkyunkwan University, Suwon 440-746, Republic of Korea |
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Abstract: | To fabricate a BN-sandwiched multilayer graphene field-effect transistor, we developed a self-aligned contact scheme in combination with optimized stamping processes for the stacking of two-dimensional (2D) materials. By using a self-aligned contact method during device fabrication, we can skip the dry-etch process which requires an exact etch-stop at the surface of the graphene layer and is not easy to control. In the structure of a dual-gate transistor, successful device operation at low temperature with and without magnetic fields proves that the self-alignment contact can be an effective tool for reliable device fabrication using 2D materials. |
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Keywords: | Graphene field-effect transistor Self-aligned contact Stamping transfer method |
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