Electrical characteristics and the energy band diagram of the isotype n-Si1?xGex/n-Si heterojunction in relaxed structures |
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| Authors: | L K Orlov Zs J Horváth A V Potapov M L Orlov S V Ivin V I Vdovin E A Steinman and V M Fomin |
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| Institution: | (1) Institute for Physics of Microstructure, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia;(2) Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Budapest, Hungary;(3) Nizhni Novgorod State University, Nizhni Novgorod, 603950, Russia;(4) Institute for Chemical Problems of Microelectronics, Bol’shoi Tolmachevskii per. 5, Moscow, 109017, Russia;(5) Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow oblast, 142432, Russia |
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| Abstract: | The electrical characteristics of the relaxed isotype n-Si1−x
Gex/n-Si heterojunction are studied for the case of a misfit-dislocation network formed in the vicinity of the heterointerface.
The data obtained are used to analyze the energy bands of the heterostructure. The band structure of the crystal near the
interface is shown to be formed by a charge at lattice defects. The potential-barrier parameters are estimated by analyzing
the temperature dependences of the J-U and C-U characteristics of the system.
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Translated from Fizika Tverdogo Tela, Vol. 46, No. 11, 2004, pp. 2069–2075.
Original Russian Text Copyright ? 2004 by Orlov, Horváth, Potapov, Orlov, Ivin, Vdovin, Steinman, Fomin. |
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