Solar-blind 4.55 eV band gap Mg0.55Zn0.45O components fabricated using quasi-homo buffers |
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| Authors: | ZL Liu ZX Mei TC Zhang YP Liu Y Guo XL Du A Hallen JJ Zhu AYu Kuznetsov |
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| Institution: | aBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;bDepartment of Microelectronics and IT, Laboratory of Material and Semiconductor Physics, Royal Institute of Technology, Box Electrum 226, SE-164 40 Kista, Sweden;cDepartment of Physics, University of Oslo, P.O. Box 1048 Blindern, NO-0316 Oslo, Norway |
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| Abstract: | A route for synthesizing high Mg content single-phase wurtzite MgZnO films having band gaps in the solar-blind region is demonstrated by employing molecular beam epitaxy on Al2O3 substrates. Importantly, a low Mg content “quasi-homo” buffer, Mg0.17Zn0.83O, was applied to accommodate a host of structural discrepancies and therefore, avoiding phase separation in a high Mg content film, Mg0.55Zn0.45O, as proved by X-ray diffraction. The Mg fraction in the overgrown single-phase epilayer, Mg0.55Zn0.45O, was confirmed by Rutherford backscattering spectrometry. |
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| Keywords: | A1 Phase separation A1 Solar-blind A3 Molecular beam epitaxy B1 MgZnO B2 ZnO |
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