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| 基于InP衬底的晶格失配In0.68Ga0.32As的MOCVD生长及其特性研究 | |
| 引用本文： | 朱亚旗,陈治明,陆书龙,季莲,赵勇明,谭明.基于InP衬底的晶格失配In0.68Ga0.32As的MOCVD生长及其特性研究[J].红外与毫米波学报,2013,32(2):118-121. |
| 作者姓名： | 朱亚旗 陈治明 陆书龙 季莲 赵勇明 谭明 |
| 作者单位： | 1. 西安理工大学自动化与信息工程学院,陕西西安710054;中国科学院苏州纳米技术与纳米仿生研究所纳米器件重点实验室,江苏苏州215125 2. 西安理工大学自动化与信息工程学院,陕西西安,710054 3. 中国科学院苏州纳米技术与纳米仿生研究所纳米器件重点实验室,江苏苏州,215125 |
| 基金项目： | 国家自然科学基金(NO.61176128);苏州市工业支撑计划(Y1SAQ31001); |
| 摘 要： | 采用MOCVD生长技术在InP衬底上成功实现了晶格失配的3μm In0.68 Ga0.32As薄膜生长.通过As组分的改变,利用张应变和压应变交替补偿的InAsxP1-x应变缓冲层结构来释放由于晶格失配所产生的应力,在InP衬底上得到了与In0.68Ga0.32 As晶格匹配的InAsxP1-x“虚拟”衬底,通过对缓冲层厚度的优化,使应力能够在“虚拟”衬底上完全豫弛.通过原子力显微镜(AFM)、高分辨XRD、透射电镜(TEM)和光致发光(PL)等测试分析表明,这种释放应力的方法能够有效提高In0.68 Ga0.32 As外延层的晶体质量. |
| 关 键 词： | In0.68Ga0.32As 应力释放 InAsxP1-x |
| 收稿时间： | 2012/4/25 0:00:00 |
| 修稿时间： | 2012/10/27 0:00:00 |
Characterization of the lattice mismatched In0.68Ga0.32As Material Grown on InP substrate by MOCVD |
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| ZHU Ya-Qi,CHEN Zhi-Ming,LU Shu-Long,JI Lian,ZHAO Yong-Ming and TAN Ming.Characterization of the lattice mismatched In0.68Ga0.32As Material Grown on InP substrate by MOCVD[J].Journal of Infrared and Millimeter Waves,2013,32(2):118-121. | |
| Authors: | ZHU Ya-Qi CHEN Zhi-Ming LU Shu-Long JI Lian ZHAO Yong-Ming and TAN Ming |
| Abstract: | The lattice mismatched In0.68 Ga0.32 As material were grown on InP substrate by MOCVD technology. InAsxP1-x metamorphic buffer layer structures with various As compositions were grown on InP substrates, which forms an alternative tension and pressive strain offset buffer structure , we got a strain relaxed InAsXP1- X "virtual" substrate, which is lattice matched to In0.68 Ga0.32 As .With an optimized buffer thickness,the strain was completely relaxed in the "virtual" substrate. The analysis of AFM, HRXRD ,TEM and photoluminescence(PL) indicated that this way can effectively improve the quality of the In0.68 Ga0.32 As material. |
| Keywords: | In0 68Ga0 32As strain relaxation InAsxP1-x |
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