Dynamic analytical model for charge transport in octithiophene thin film transistors |
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Authors: | S. Zorai S. MansouriR. Bourguiga |
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Affiliation: | Laboratoire de Physique des Matériaux: Structure et Propriétés, Groupe Physique des Composants et Dispositifs Nanométriques, Faculté des Sciences de Bizerte, 7021 Jarzouna-Bizerte, Tunisia |
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Abstract: | In this paper, we develop a device model of an organic thin film transistor (OTFTs) in which the active layers are made of octithiophene. This model is based on variable range hopping theory, i.e., a carrier may either hop over a small distance with a high activation energy or hop over a long distance with a low activation energy. The model takes into account all the operating regimes in direct current and transient mode; the transistor symmetry is also considered. The model has been developed using a physical basis where the model parameters can easily be extracted. The current–voltage characteristics of short-channel organic TFTs have been calculated starting from the solution of the drain current equation for an enhancement mode p-channel MOSFET. A good agreement between theory model and experimental results is obtained. Different transport parameters are extracted by using a fitting method. We have extracted the mobility of charge in saturation regime using differential method. Based on first and second derivative of transfer characteristic we extracted a serial resistance, intrinsic mobility and threshold voltage. The mobility in saturation regime is reproduced using the VRH model. Finally, we give a simple small-signal equivalent circuit. |
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Keywords: | Octithiophene Dynamic charge transport Thin film transistors |
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