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Hydrostatic pressure on optical absorption and refractive index changes of a shallow hydrogenic impurity in a GaAs/GaAlAs quantum wire |
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| Authors: | M Santhi A John Peter ChangKyoo Yoo |
| Institution: | 1. Dept. of Physics, Sri Meenakshi Govt. Arts College for Women, Madurai 625 002, India;2. Dept. of Physics, Govt. Arts College, Melur 625 106, Madurai, India;3. Center for Environmental Studies/Green Energy Center, Dept. of Environmental Science and Engineering, College of Engineering, Kyung Hee University, Seocheon-dong 1, Giheung-gu, Yongin-Si, Gyeonggi Do, 446-701, South Korea |
| Abstract: | The effect of hydrostatic pressure on the binding energy of a hydrogenic impurity in a GaAs/GaAlAs quantum wire is discussed. Calculations have been performed using Bessel functions as an orthonormal basis within a single band effective mass approximation. Pressure induced photoionization cross section of the hydrogenic impurity is investigated. The total optical absorption and the refractive index changes as a function of normalized photon energy between the ground and the first excited state in the presence of pressure are analysed. The optical absorption coefficients and the refractive index changes strongly depend on the incident optical intensity and the pressure. |
| Keywords: | Oscillator strength Hydrostatic pressure Quantum wire |
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