Influence of density inhomogeneity on the quantum capacitance of graphene nanoribbon field effect transistors |
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Authors: | GS Kliros |
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Institution: | Department of Aeronautical Sciences, Division of Electronics and Communications Engineering, Hellenic Air-Force Academy, Dekeleia Air-Force Base GR-1010, Attica, Greece |
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Abstract: | A semi-analytical model for the capacitance–voltage characteristics of graphene nanoribbon field-effect transistors (GNR-FETs), in the quantum capacitance limit, is presented. The model incorporates the presence of electron–hole puddles induced by local potential fluctuations assuming a Gaussian distribution associated with these puddles. Our numerical results show that the multi-peaks in the non-monotonic quantum capacitance–voltage characteristics are broadened as the potential fluctuation strength increases and the broadening effect is much more pronounced in wide GNRs. The influence of both gate-insulator thickness and dielectric constant scaling on the total gate-capacitance characteristics is also explored. Gate capacitance has non-monotonic behavior with ripples for thin gate-insulators. However, as we go beyond the quantum capacitance limit by increasing insulator thickness or decreasing dielectric constant, the ripples are suppressed and smooth monotonic characteristics are obtained. |
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Keywords: | Graphene FETs Graphene nanoribbons Gate capacitance Quantum capacitance Electron&ndash hole puddles |
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