Tilted electric field effects on the electronic states in a GaAs quantum disk

In the present work we report the effects of a geometrical confinement and tilted applied electric field on the electronic energy levels in a semiconducting quantum disk. Calculations are performed in the effective mass approximation and using a variational method. The results can be summarized as follows: (1) due to the infinite confinement along the all directions of the heterostructure, the variational calculation with two parameters for tilted applied electric field can be treated with two independent each other variational parameters; (2) the magnitude of the energy shift is an increasing function of the applied electric field; (3) the effects of the applied electric field are magnified as the dimensions of the heterostructure (height and radius) grow; and finally (4) for large enough applied electric field the energy shift is a linear function of the applied electric field.