Mn doped ZnO nanostructured thin films prepared by ultrasonic spray pyrolysis method |
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Authors: | R. Baghdad B. Kharroubi A. Abdiche M. Bousmaha M.A. Bezzerrouk A. Zeinert M. El Marssi K. Zellama |
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Affiliation: | 1. Laboratoire de Génie Physique, Université Ibn-Khaldoun, 14000 Tiaret, Algeria;2. LPMC, Faculté des Sciences, Université de Picardie Jules Verne, 33 Rue Saint-Leu, 80039 Amiens, France |
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Abstract: | Mn-doped ZnO thin films with different percentage of Mn content (0, 1, 3 and 5 at.%) and substrate temperature of 350 °C, were deposited by a simple ultrasonic spray pyrolysis method under atmospheric pressure. We have studied the structural and optical properties by using X-ray diffraction (XRD), Raman spectroscopy, Fourier transform infrared spectroscopy (FTIR) and ultra-violet visible near infrared (UV–Vis-NIR) spectroscopy. The lattice parameters calculated for the Mn-doped ZnO from XRD pattern were found to be slightly larger than those of the undoped ZnO, which indicate substitution of Mn in ZnO lattice. Compared with the Raman spectra for ZnO pure films, the Mn-doping effect on the spectra is revealed by the presence of additional peak around 524 cm−1 due to Mn incorporation. With increasing Mn doping the optical band gap increases indicating the Burstein–Moss effect. |
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Keywords: | Thin films Chemical synthesis Raman spectroscopy Microstructure |
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