|
|||||
|
|
Analytical modeling of subthreshold current and subthreshold swing of short-channel triple-material double-gate (TM-DG) MOSFETs |
|
| Authors: | Pramod Kumar Tiwari Sarvesh Dubey Kunal Singh S Jit |
| Institution: | 1. Department of Electronics and Communication Engineering, National Institute of Technology, Rourkela 769008, Odisha, India;2. Centre for Research in Microelectronics (CRME), Department of Electronics Engineering, Institute of Technology, Banaras Hindu University, Varanasi 221005, India |
| Abstract: | An analytical model for subthreshold current and subthreshold swing of short-channel triple-material double-gate (TM-DG) MOSFETs is presented in this paper. Both the drift and diffusion components of current densities are considered for the modeling of subthreshold current. Virtual cathode concept of DG MOSFETs is utilized to model the subthreshold swing of TM-DG MOSFETs. The effect of different length ratios of the three channel regions under three different gate materials of device on the subthreshold current and subthreshold swing of the short-channel TM-DG MOSFETs have been discussed. The dependencies of subthreshold current and subthreshold swing on various device parameters have been studied. The simulation data obtained by using the commercially available 2D device simulation software ATLAS™ has been used to validate the present model. |
| Keywords: | DM-DG MOSFET TM-DG MOSFET Hot carrier effects Short channel effects Work function |
| 本文献已被 ScienceDirect 等数据库收录！ | |