Study and modeling of the transport mechanism in a semi insulating GaAs Schottky diode |
| |
Authors: | A. Resfa Bourzig Y. SmahiBrahimi.R. Menezla |
| |
Affiliation: | Laboratory of Modeling and Conception of the Circuits Electronic, Department of Electronics, University Djillali Liabès, BP89, Sidi Bel Abbes 22000, Algeria |
| |
Abstract: | The current through a metal–semiconductor junction is mainly due to the majority carriers. Three distinctly different mechanisms exist in a Schottky diode: diffusion of carriers from the semiconductor into the metal, thermionic emission–diffusion (TED) of carriers across the Schottky barrier and quantum–mechanical tunneling through the barrier. The insulating layer converts the MS device in an MIS device and has a strong influence on its current–voltage (I–V) and the parameters of a Schottky barrier from 3.7 to 15 eV. There are several possible reasons for the error that causes a deviation of the ideal behavior of Schottky diodes with and without an interfacial insulator layer. These include the particular distribution of interface states, the series resistance, bias voltage and temperature. The GaAs and its large concentration values of trap centers will participate in an increase of the process of thermionic electrons and holes, which will in turn the IV characteristic of the diode, and an overflow maximum value [NT = 3 × 1020] is obtained. The I–V characteristics of Schottky diodes are in the hypothesis of a parabolic summit. |
| |
Keywords: | The electrocstatic potentiel and density of carriers The thermionic emission-diffusion current (TED) The tunnel current through the gate The current&ndash voltage (I&ndash V) Characteristics of Schottky diodesand the temperature |
本文献已被 ScienceDirect 等数据库收录! |