| W-band push–push monolithic frequency doubler in 1-μm InP DHBT technology |
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| 作者姓名： | 姚鸿飞 王显泰 吴旦昱 苏永波 曹玉雄 葛霁 宁晓曦 金智 |
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| 作者单位： | Institute of Microelectronics,Chinese Academy of Sciences |
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| 基金项目： | supported by the National Basic Research Program of China(No.2010CB327502) |
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| 摘 要： | A W-band frequency doubler MMIC is designed and fabricated using 1-μm InP DHBT technology. Active balun is employed to transform the single-ended signal into differential output. Push-push configuration loaded with harmonic resonant network is utilized to acquire the second harmonic frequency. A multi-stage differential structure improves the conversion gain and suppresses the fundamental frequency. The MMIC occupies an area of 0.55×0.5 mm2 with 18 DHBTs integrated. Measurements show that the output power is above 5.8 dBm with the suppression of fundamental frequency below -16 dBc and the conversion gain above 4.7 dB over 75-80 GHz.
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| 关 键 词： | frequency doubler W-band InP DHBT push–push |
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