| 室温下Ga1-xHoxN (x=0.0 and 0.05)稀磁半导体薄膜磁性 |
| |
| 作者姓名： | Ghulam Murtaza Rai Muhammad Azhar Iqbal Yong-bing Xu Iain Gordon Will Qasim Mahmood |
| |
| 作者单位： | 巴基斯坦旁遮普大学物理系，拉合尔54590;巴基斯坦旁遮普大学物理系，拉合尔54590;英国约克大学，电子系自旋电子学实验室，约克YO105DD;英国约克大学，电子系自旋电子学实验室，约克YO105DD;英国约克大学，电子系自旋电子学实验室，约克YO105DD |
| |
| 摘 要： | 采用热蒸镀技术和后续氨退火制备了Ho掺杂GaN稀磁半导体薄膜. X射线衍射分析表明，所有的峰属于六角纤锌矿结构. 利用扫描电子显微镜和能量色散谱分别进行了表面形貌和成分分析. 用振动样品磁强计在室温测定了Ga1-xHoxN(x=0.0，0.05)的室温铁磁性. 磁性测量结果表明，未掺杂薄膜GaN具有抗磁性行为，而Ho掺杂Ga0.95Ho0.05N的薄膜表现出铁磁行为.
|
| 关 键 词： | 稀磁半导体，钬掺杂，X射线衍射仪，扫描电子显微镜，室温铁磁性 |
| 收稿时间： | 2011/11/24 0:00:00 |
Room Temperature Ferromagnetism in Ga1-xHoxN (x=0.0 and 0.05) Diluted Magnetic Semiconductor Thin Films |
| |
| Ghulam Murtaza Rai,Muhammad Azhar Iqbal,Yong-bing Xu,Iain Gordon Will,Qasim Mahmood.Room Temperature Ferromagnetism in Ga1-xHoxN (x=0.0 and 0.05) Diluted Magnetic Semiconductor Thin Films[J].Chinese Journal of Chemical Physics,2012,25(3):313-317. |
| |
| Authors: | Ghulam Murtaza Rai Muhammad Azhar Iqbal Yong-bing Xu Iain Gordon Will and Qasim Mahmood |
| |
| Institution: | Department of Physics, University of the Punjab, Lahore 54590, Pakistan;Department of Physics, University of the Punjab, Lahore 54590, Pakistan;Spintronics Laboratory, Department of Electronics, The University of York, York YO10 5DD, UK;Spintronics Laboratory, Department of Electronics, The University of York, York YO10 5DD, UK;Spintronics Laboratory, Department of Electronics, The University of York, York YO10 5DD, UK |
| |
| Abstract: | Holmium doped GaN diluted magnetic semiconductor thin films have been prepared by thermal evaporation technique and subsequent ammonia annealing. X-ray diffraction mea-surements reveal all peaks belong to the purely hexagonal wurtzite structure. Surface mor-phology and composition analysis were carried out by scanning electron microscopy and energy dispersive spectroscopy respectively. The room temperature ferromagnetic proper-ties of Ga1-xHoxN(x=0.0, 0.05) films were analyzed using vibrating sample magnetometer at room temperature. Magnetic measurements showed that the undoped films (i.e. GaN) exhibited diamagnetic behavior, while the Ho-doped (Ga0.95Ho0.05N) film exhibited a ferro-magnetic behavior. |
| |
| Keywords: | Diluted magnetic semiconductor Holmium doping X-ray diffraction Scan-ning electron microscopy Room temperature ferromagnetism |
|
| 点击此处可从《化学物理学报》浏览原始摘要信息 |
| 点击此处可从《化学物理学报》下载免费的PDF全文 |
